Neutron-Induced Multiple Bit Upsets on Dynamically-Stressed Commercial SRAM Arrays

Abstract : We investigate the occurrence of Multiple Bit Upsets in commercial SRAMs of 4Mbits and 32Mbits when irradiated with neutrons. The devices were irradiated at TSL facility with QMN beams of energies from 50MeV to 180MeV. Experimental data demonstrate that the dynamic-stress increases SRAMs sensitivity as well as MBUs occurrence for both the memory types. We also show that both SEU and MBU cross section may depend on memory architecture and memory utilization.
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Communication dans un congrès
RADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2011, Seville, Spain. IEEE, pp.274-280, 2011, 〈http://www.radecs2011.org/〉. 〈10.1109/RADECS.2011.6131396〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00805314
Contributeur : Luigi Dilillo <>
Soumis le : mercredi 27 mars 2013 - 15:51:30
Dernière modification le : mercredi 30 mai 2018 - 09:34:04

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Paolo Rech, Jean-Marc Galliere, Patrick Girard, Alessio Griffoni, Frédéric Wrobel, et al.. Neutron-Induced Multiple Bit Upsets on Dynamically-Stressed Commercial SRAM Arrays. RADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2011, Seville, Spain. IEEE, pp.274-280, 2011, 〈http://www.radecs2011.org/〉. 〈10.1109/RADECS.2011.6131396〉. 〈lirmm-00805314〉

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