Neutron-Induced Multiple Bit Upsets on Dynamically-Stressed Commercial SRAM Arrays - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2011

Neutron-Induced Multiple Bit Upsets on Dynamically-Stressed Commercial SRAM Arrays

Abstract

We investigate the occurrence of Multiple Bit Upsets in commercial SRAMs of 4Mbits and 32Mbits when irradiated with neutrons. The devices were irradiated at TSL facility with QMN beams of energies from 50MeV to 180MeV. Experimental data demonstrate that the dynamic-stress increases SRAMs sensitivity as well as MBUs occurrence for both the memory types. We also show that both SEU and MBU cross section may depend on memory architecture and memory utilization.

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Electronics
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Dates and versions

lirmm-00805314 , version 1 (27-03-2013)

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Paolo Rech, Jean-Marc J.-M. Galliere, Patrick Girard, Alessio Griffoni, Frédéric Wrobel, et al.. Neutron-Induced Multiple Bit Upsets on Dynamically-Stressed Commercial SRAM Arrays. RADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2011, Seville, Spain. pp.274-280, ⟨10.1109/RADECS.2011.6131396⟩. ⟨lirmm-00805314⟩
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