Neutron-Induced Multiple Bit Upsets on Dynamically-Stressed Commercial SRAM Arrays

Paolo Rech 1 Jean-Marc Galliere 1 Patrick Girard 1 Alessio Griffoni 2 Frédéric Wrobel 3, 4 Frédéric Saigné 3, 4 Luigi Dilillo 1, *
* Corresponding author
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
4 RADIAC - Radiations et composants
IES - Institut d’Electronique et des Systèmes
Abstract : We investigate the occurrence of Multiple Bit Upsets in commercial SRAMs of 4Mbits and 32Mbits when irradiated with neutrons. The devices were irradiated at TSL facility with QMN beams of energies from 50MeV to 180MeV. Experimental data demonstrate that the dynamic-stress increases SRAMs sensitivity as well as MBUs occurrence for both the memory types. We also show that both SEU and MBU cross section may depend on memory architecture and memory utilization.
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Conference papers
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00805314
Contributor : Luigi Dilillo <>
Submitted on : Wednesday, March 27, 2013 - 3:51:30 PM
Last modification on : Wednesday, August 28, 2019 - 3:46:02 PM

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Paolo Rech, Jean-Marc Galliere, Patrick Girard, Alessio Griffoni, Frédéric Wrobel, et al.. Neutron-Induced Multiple Bit Upsets on Dynamically-Stressed Commercial SRAM Arrays. RADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2011, Seville, Spain. pp.274-280, ⟨10.1109/RADECS.2011.6131396⟩. ⟨lirmm-00805314⟩

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