Analysis and Fault Modeling of Actual Resistive Defects in ATMELtm eFlash Memories

Abstract : The embedded Flash (eFlash) technology can be subject to defects creating functional faults. In this paper, we first generalize the electrical model of the ATMEL TSTAC eFlash memory technology proposed in [1]. The model is composed of two layers: a functional layer representing the Floating Gate (FG) and a programming layer able to determine the channel voltage level controlling the Fowler-Nordheim tunneling effect. The proposed model is validated by means of simulations and comparisons with ATMEL silicon data. Then, we present a complete analysis of actual resistive defects (open and short) that may affect the ATMEL TSTAC eFlash array by considering the proposed model on a hypothetical 4x4 array. This analysis highlights the interest of the proposed model to provide a realistic set of fault models that has to be tested, thus enhancing existing solutions for TSTAC™ eFlash testing.
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Article dans une revue
Journal of Electronic Testing, Springer Verlag, 2012, 28 (2), pp.215-228
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00806773
Contributeur : Arnaud Virazel <>
Soumis le : mardi 2 avril 2013 - 12:18:17
Dernière modification le : jeudi 24 mai 2018 - 15:59:24

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  • HAL Id : lirmm-00806773, version 1

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Pierre-Didier Mauroux, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, et al.. Analysis and Fault Modeling of Actual Resistive Defects in ATMELtm eFlash Memories. Journal of Electronic Testing, Springer Verlag, 2012, 28 (2), pp.215-228. 〈lirmm-00806773〉

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