Coupling-Based Resistive-Open Defects in TAS-MRAM Architectures

Abstract : Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM) is an emerging technology that offers several advantages compared to existing non-volatile memory technologies. In this paper we show how coupling faults induced by resistive-open defects impact the TAS-MRAM architecture. Results shows that read and write operations may be affected these defects and may induce single and double cell faulty behaviors.
Type de document :
Poster
ETS: European Test Symposium, May 2012, Annecy, France. Test Symposium (ETS), 2012 17th IEEE European, 2012, 〈10.1109/ETS.2012.6233034〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00806793
Contributeur : Arnaud Virazel <>
Soumis le : mardi 2 avril 2013 - 13:18:21
Dernière modification le : jeudi 24 mai 2018 - 15:59:24

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João Azevedo, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, et al.. Coupling-Based Resistive-Open Defects in TAS-MRAM Architectures. ETS: European Test Symposium, May 2012, Annecy, France. Test Symposium (ETS), 2012 17th IEEE European, 2012, 〈10.1109/ETS.2012.6233034〉. 〈lirmm-00806793〉

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