Coupling-Based Resistive-Open Defects in TAS-MRAM Architectures - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Poster Year : 2012

Coupling-Based Resistive-Open Defects in TAS-MRAM Architectures

Abstract

Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM) is an emerging technology that offers several advantages compared to existing non-volatile memory technologies. In this paper we show how coupling faults induced by resistive-open defects impact the TAS-MRAM architecture. Results shows that read and write operations may be affected these defects and may induce single and double cell faulty behaviors.
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lirmm-00806793 , version 1 (02-04-2013)

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João Azevedo, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, et al.. Coupling-Based Resistive-Open Defects in TAS-MRAM Architectures. ETS: European Test Symposium, May 2012, Annecy, France. Test Symposium (ETS), 2012 17th IEEE European, 2012, ⟨10.1109/ETS.2012.6233034⟩. ⟨lirmm-00806793⟩
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