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Through-Silicon-Via Resistive-Open Defect Analysis

Abstract : Three-dimensional (3D) integration is a fast emerging technology that offers integration of high density, fast performance and heterogeneous circuits in a small footprint. Through-Silicon-Vias (TSVs) enable 3D integration by providing fast performance and short interconnects among tiers. However, they are also susceptible to defects that occur during manufacturing steps and cause crucial reliability issues. In this paper, we perform an analysis of resistive-open defects (ROD) on TSVs considering coupling effects (i.e. inductive and capacitive) and a wide frequency spectrum. Our experiments show that both substrate coupling and switching frequency can have a significant impact on weak open TSV behavior.
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Contributor : Arnaud Virazel <>
Submitted on : Tuesday, April 2, 2013 - 2:52:22 PM
Last modification on : Friday, November 27, 2020 - 6:04:03 PM




Carolina Momo Metzler, Aida Todri-Sanial, Alberto Bosio, Luigi Dilillo, Patrick Girard, et al.. Through-Silicon-Via Resistive-Open Defect Analysis. ETS: European Test Symposium, May 2012, Annecy, France. ⟨10.1109/ETS.2012.6233037⟩. ⟨lirmm-00806848⟩



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