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SRAM testing under Neutron Radiation for the evaluation of different algorithms stress

Georgios Tsiligiannis 1 Luigi Dilillo 1 Alberto Bosio 1 Patrick Girard 1 Aida Todri-Sanial 1 Arnaud Virazel 1
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : Electronic system reliability over soft errors is very critical as the transistor size shrinks. Many recent works have defined the device error rate under radiation for SRAMs in hold mode (static) and during operation (dynamic). This paper evaluates the impact of running test algorithms on SRAMs exposed to neutron radiation, in order to define their stressing factor. The results that we show are based on experiments performed at the TSL facilities in Uppsala, Sweden using a Quasi-Monoenergetic neutron beam. The evaluation of the test algorithms is based on the calculated device SEU cross section.
Mots-clés : Single Event Upset SRAM Cross-section radiation neutrons test
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Conference papers
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00807054
Contributor : Luigi Dilillo <>
Submitted on : Tuesday, April 2, 2013 - 8:52:20 PM
Last modification on : Friday, November 27, 2020 - 6:04:03 PM

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  • HAL Id : lirmm-00807054, version 1

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CNRS | SYSMIC | LIRMM | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER

Citation

Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Aida Todri-Sanial, et al.. SRAM testing under Neutron Radiation for the evaluation of different algorithms stress. 15ème Journées Nationales du Réseau Doctoral en Microélectronique, Jun 2012, Marseille, France. ⟨lirmm-00807054⟩

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