Effect-Cause Intra-Cell Diagnosis at Transistor Level

Abstract : Logic diagnosis is the process of isolating possible sources of observed errors in a defective circuit, so that physical failure analysis can be performed to determine the root cause of such errors. Thus, effective and accurate logic diagnosis is crucial to speed up physical failure analysis process and eventually to improve the yield. In this paper, we propose a new intra-cell diagnosis method based on the "Effect-Cause" approach to improve the defect localization accuracy. The proposed approach is based on the Critical Path Tracing here applied at transistor level. It leads to a precise localization of the root cause of observed errors. Experimental results show the efficiency of our approach.
Type de document :
Communication dans un congrès
ISQED: International Symposium on Quality Electronic Design, Mar 2013, Santa Clara, CA, United States. 14th International Symposium on Quality Electronic Design, pp.460-467, 2013, 〈http://www.isqed.org/〉. 〈10.1109/ISQED.2013.6523652〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00817224
Contributeur : Alberto Bosio <>
Soumis le : mercredi 24 avril 2013 - 10:23:21
Dernière modification le : mardi 25 septembre 2018 - 14:30:02

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Zhenzhou Sun, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri-Sanial, et al.. Effect-Cause Intra-Cell Diagnosis at Transistor Level. ISQED: International Symposium on Quality Electronic Design, Mar 2013, Santa Clara, CA, United States. 14th International Symposium on Quality Electronic Design, pp.460-467, 2013, 〈http://www.isqed.org/〉. 〈10.1109/ISQED.2013.6523652〉. 〈lirmm-00817224〉

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