Cellule mémoire avec mémorisation volatile et non volatile

Abstract : The invention concerns a memory device comprising at least one memory cell comprising: first and second pairs of cross-coupled transistors; and a first resistance switching element (202) coupled between a first supply voltage (VDD, GND) and a first transistor of said first pair of transistors and programmed to have one of first and second resistances; and control circuitry adapted to store a data value (DNV) at said first and second storage nodes by coupling said first storage node to said second supply voltage (VDD, GND), the data value being determined by the programmed resistance of the first resistance switching element.
Type de document :
Brevet
France, N° de brevet: FR 2976711 (A1) WO/2012/171988 (A1). 2012, pp.N/A
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00861518
Contributeur : Isabelle Gouat <>
Soumis le : jeudi 12 septembre 2013 - 19:36:55
Dernière modification le : jeudi 11 janvier 2018 - 06:27:19

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  • HAL Id : lirmm-00861518, version 1

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Citation

Yoann Guillemenet, Lionel Torres. Cellule mémoire avec mémorisation volatile et non volatile. France, N° de brevet: FR 2976711 (A1) WO/2012/171988 (A1). 2012, pp.N/A. 〈lirmm-00861518〉

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