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Communication Dans Un Congrès Année : 2013

TSVs Pre-Bond Testing: a test scheme for capturing BIST responses

Résumé

The proposed test method aims to detect TSV defects without requiring any contact from a probe-card and thus allows pre-bond testing before wafer thinning. As in previous proposals from the literature, the TSV under test is used by the proposed DfT scheme as a capacitive load and the measure of its charge/discharge delay is used as an indirect measure of its RC parameters. The proposed solution allows testing TSVs individually and at the same time with a small impact of the area overhead for the associated DfT.
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Dates et versions

lirmm-00989707 , version 1 (12-05-2014)

Identifiants

  • HAL Id : lirmm-00989707 , version 1

Citer

Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre, Hakim Zimouche. TSVs Pre-Bond Testing: a test scheme for capturing BIST responses. 3D-Test: Testing Three-Dimensional Stacked Integrated Circuits, Sep 2013, Anaheim, CA, United States. ⟨lirmm-00989707⟩
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