Comparison of open and resistive-open defect test conditions in SRAM address decoders

Abstract : This paper presents a comparative analysis of open (ADOF: Address Decoder Open Fault) and resistive open defects in address decoders of embedded-SRAMs. Such defects are the primary target of this study because they are notoriously hard-to-detect faults. In particular, we consider dynamic defects which may appear in the transistor parallel plane of address decoders. From this study, we show that test conditions required for ADOFs testing (sensitization and observation) can be partially used also for resistive open defect testing.
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Communication dans un congrès
ATS: Asian Test Symposium, Nov 2003, Xian, China. 12th IEEE AsianTest Symposium, pp.250-255, 2003, 〈10.1109/ATS.2003.1250818〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01238821
Contributeur : Luigi Dilillo <>
Soumis le : lundi 7 décembre 2015 - 10:59:46
Dernière modification le : jeudi 24 mai 2018 - 15:59:25

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Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Simone Borri, et al.. Comparison of open and resistive-open defect test conditions in SRAM address decoders. ATS: Asian Test Symposium, Nov 2003, Xian, China. 12th IEEE AsianTest Symposium, pp.250-255, 2003, 〈10.1109/ATS.2003.1250818〉. 〈lirmm-01238821〉

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