Adaptive Source Bias for Improved Resistive-Open Defect Coverage during SRAM Testing

Ioana Vatajelu 1 Luigi Dilillo 2 Alberto Bosio 2 Patrick Girard 2 Aida Todri-Sanial 2 Arnaud Virazel 2 Nabil Badereddine 3
1 Polito - Politecnico di Torino [Torino]
2 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
3 IMC - Intel Mobile Communications
Abstract : SRAM testing is becoming more and more challenging due to issues caused by continuous device scaling. Fabricated SRAMs are submitted to random and systematic process variability, which strongly affect the cell's behavior and also the ability of test algorithms to detect faults. Traditionally, bias conditions have been used to improve the behavior of the SRAM under process variations by applying body bias to compensate for the effect of variability. Based on the same principle, bias conditions also affect the cell's behavior when resistive-opens are present, hence affecting test's defect coverage capability. Both body- and source-bias conditions are analyzed in this paper to find the way to improve defect detect ability in the SRAM cell. Source-biasing has been proven to be the more effective of the two, leading to more than 3X improvement of the defect detected value. Also, by adapting the source-bias conditions to process parameter values, over- and under-testing of the SRAM can be avoided.
Keywords : SRAM chips fault diagnosis integrated circuit testing SRAM testing adaptive source bias continuous device scaling fault detection process variability resistive-open defect coverage test algorithms Circuit faults MOSFET SRAM cells Testing Threshold voltage 6T SRAM Cell Adaptive Test Resistive-open Defects Source-Biasing
Type de document :
Communication dans un congrès
ATS: Asian Test Symposium, Nov 2013, Jiaosi Township, Taiwan. pp.109-114, 2013, 〈10.1109/ATS.2013.30〉
Liste complète des métadonnées
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01248609
Contributeur : Aida Todri-Sanial <>
Soumis le : dimanche 27 décembre 2015 - 21:41:49
Dernière modification le : jeudi 24 mai 2018 - 15:59:25

Identifiants

Collections

SYSMIC | LIRMM | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER

Citation

Ioana Vatajelu, Luigi Dilillo, Alberto Bosio, Patrick Girard, Aida Todri-Sanial, et al.. Adaptive Source Bias for Improved Resistive-Open Defect Coverage during SRAM Testing. ATS: Asian Test Symposium, Nov 2013, Jiaosi Township, Taiwan. pp.109-114, 2013, 〈10.1109/ATS.2013.30〉. 〈lirmm-01248609〉

Exporter

BibTeX TEI DC DCterms EndNote

Partager

Métriques

Consultations de la notice

87

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD