Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.

Mots clés

130nm technology static and dynamic mode testing radiation testing multiple cell upset (MCU) FRAM single event upset (SEU)

Domaines

Physique Nucléaire Expérimentale [nucl-ex] Sciences de l'ingénieur [physics]

Luigi Dilillo : Connectez-vous pour contacter le contributeur

https://hal-lirmm.ccsd.cnrs.fr/lirmm-01382552

Soumis le : lundi 17 octobre 2016-11:43:17

Dernière modification le : mardi 23 janvier 2024-12:28:53

Dates et versions

lirmm-01382552 , version 1 (17-10-2016)

Identifiants

HAL Id : lirmm-01382552 , version 1
DOI : 10.1109/TNS.2016.2559943

Citer

Viyas Gupta, Alexandre Louis Bosser, Georgios Tsiligiannis, Ali Mohammad Zadeh, Arto Javanainen, et al.. Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions. IEEE Transactions on Nuclear Science, 2016, 63 (4), pp.2010-2015. ⟨10.1109/TNS.2016.2559943⟩. ⟨lirmm-01382552⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

CNRS IES SYSMIC LIRMM LIRMM_MIC MIC MIPS UNIV-MONTPELLIER

165 Consultations

0 Téléchargements