Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

Abstract : The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.
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IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, 63 (4), pp.2010-2015. 〈10.1109/TNS.2016.2559943〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01382552
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Soumis le : lundi 17 octobre 2016 - 11:43:17
Dernière modification le : lundi 15 octobre 2018 - 09:53:21

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Viyas Gupta, Alexandre Bosser, Georgios Tsiligiannis, Ali Mohammad Zadeh, Arto Javanainen, et al.. Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, 63 (4), pp.2010-2015. 〈10.1109/TNS.2016.2559943〉. 〈lirmm-01382552〉

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