Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2016

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

Abstract

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.
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lirmm-01382552 , version 1 (17-10-2016)

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Viyas Gupta, Alexandre Louis Bosser, Georgios Tsiligiannis, Ali Mohammad Zadeh, Arto Javanainen, et al.. Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions. IEEE Transactions on Nuclear Science, 2016, 63 (4), pp.2010-2015. ⟨10.1109/TNS.2016.2559943⟩. ⟨lirmm-01382552⟩
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