A ReRAM-Based Non-Volatile and Radiation-Hardened Latch Design - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles Micromachines Year : 2022

A ReRAM-Based Non-Volatile and Radiation-Hardened Latch Design

Abstract

In aerospace environments, high reliability and low power consumption of chips are essential. To greatly reduce power consumption, the latches of a chip need to enter the power down operation. In this operation, employing non-volatile (NV) latches can retain circuit states. Moreover, a latch can be hit by a radiative particle in the aerospace environment, which can cause a severe soft error in the worst case. This paper presents a NV-latch based on resistive random-access memories (ReRAMs) for NV and robust applications. The proposed NV-latch is radiation-hardened with low overhead and can restore values after power down operation. Simulation results demonstrate that the proposed NV-latch can completely provide radiation hardening capability against single-event upsets (SEUs) and can restore values after power down operation. The proposed NV-latch can reduce the number of transistors in the storage cells by 50% on average compared with the other similar solutions.
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Dates and versions

lirmm-04236275 , version 1 (10-10-2023)

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Aibin Yan, Shaojie Wei, Yu Chen, Zhengzheng Fan, Zhengfeng Huang, et al.. A ReRAM-Based Non-Volatile and Radiation-Hardened Latch Design. Micromachines, 2022, 13 (11), pp.1802. ⟨10.3390/mi13111802⟩. ⟨lirmm-04236275⟩
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