Analysing the Memory Effect of Resistive Open in CMOS Random Logic

Michel Renovell 1 Mariane Comte 1 Ilia Polian 2 Piet Engelke 2 Bernd Becker 2
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : This paper analyzes the electrical behaviour of resistive opens as a function of its unpredictable resistance. It is demonstrated that the electrical behaviour depends on the value of the open resistance. It is also shown that, due to the memory effect detection of the open by a given vector Ti depends on all the vectors that have been applied to the circuit before Ti. An electrical analysis of this memory effect is presented.
Type de document :
Communication dans un congrès
DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2006, Tunis, Tunisia. Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on, pp.251-256, 2006
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Soumis le : mercredi 13 septembre 2006 - 12:03:30
Dernière modification le : jeudi 11 janvier 2018 - 06:27:19
Document(s) archivé(s) le : lundi 5 avril 2010 - 23:18:23

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  • HAL Id : lirmm-00093383, version 1

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Michel Renovell, Mariane Comte, Ilia Polian, Piet Engelke, Bernd Becker. Analysing the Memory Effect of Resistive Open in CMOS Random Logic. DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2006, Tunis, Tunisia. Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on, pp.251-256, 2006. 〈lirmm-00093383〉

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