Analysing the Memory Effect of Resistive Open in CMOS Random Logic - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2006

Analysing the Memory Effect of Resistive Open in CMOS Random Logic

Abstract

This paper analyzes the electrical behaviour of resistive opens as a function of its unpredictable resistance. It is demonstrated that the electrical behaviour depends on the value of the open resistance. It is also shown that, due to the memory effect detection of the open by a given vector Ti depends on all the vectors that have been applied to the circuit before Ti. An electrical analysis of this memory effect is presented.
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Dates and versions

lirmm-00093383 , version 1 (13-09-2006)

Identifiers

  • HAL Id : lirmm-00093383 , version 1

Cite

Michel Renovell, Mariane Comte, Ilia Polian, Piet Engelke, Bernd Becker. Analysing the Memory Effect of Resistive Open in CMOS Random Logic. DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2006, Tunis, Tunisia. pp.251-256. ⟨lirmm-00093383⟩
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