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Dynamic Read Destructive Faults in Embedded-SRAMs: Analysis and March Test Solution

Abstract : This paper presents an analysis of dynamic faults in core-cell of SRAM memories. These faults are the consequence of resistive-open defects that appear more frequently in VDSM technologies. In particular, the study concentrates on those defects that generate dynamic Read Destructive Faults, dRDFs. In this paper, we demonstrate that read or write operations on a cell involve a stress on the other cells of the same word line. This stress, called Read Equivalent Stress (RES), has the same effect than a read operation. On this basis, we propose to modify the well known March C-, which does not detect dRDFs, into a new version able to detect them. This is obtained by changing its addressing order with the purpose of producing the maximal number of RES. This modification does not change the complexity of the algorithm and its capability to detect the former target faults.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00108795
Contributor : Christine Carvalho de Matos <>
Submitted on : Monday, October 23, 2006 - 12:56:03 PM
Last modification on : Wednesday, August 28, 2019 - 3:46:02 PM
Long-term archiving on: : Tuesday, April 6, 2010 - 8:35:40 PM

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Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Simone Borri, et al.. Dynamic Read Destructive Faults in Embedded-SRAMs: Analysis and March Test Solution. ETS: European Test Symposium, May 2004, Ajaccio, Corsica, France. pp.140-145. ⟨lirmm-00108795⟩

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