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Electrical Performance of Single and Coupled Cu Interconnects for the 70 nm Technology

Abstract : This paper deals with propagation delay, rise time and crosstalk for Cu wire of 100 nm width and 2.2 to 1.7 aspect ratio AR ( AR /spl sime/ h/w) in single and coupled configuration. Electrical and electromagnetical characteristics are predicted, with a full wave analysis, for various wire resistivity and low k dielectric material when a clock pulse of 143 ps period (7 GHz) propagate. Critical value of 300 /spl mu/m is calculated for wire length when propagation delay equals MOSFET switching delay. Such critical values also induced more than 20% crosstalk in two coupled lines with 100 nm spacing and low k=2.0.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00108848
Contributor : Christine Carvalho de Matos <>
Submitted on : Monday, October 23, 2006 - 12:56:59 PM
Last modification on : Wednesday, May 20, 2020 - 10:16:06 AM

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K. El Bouazzati, Freddy Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, et al.. Electrical Performance of Single and Coupled Cu Interconnects for the 70 nm Technology. SPI: Signal Propagation on Interconnects, May 2004, Heidelberg, Germany. pp.189-191, ⟨10.1109/SPI.2004.1409048⟩. ⟨lirmm-00108848⟩

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