Electrical Performance of Single and Coupled Cu Interconnects for the 70 nm Technology

K. El Bouazzati F. Ponchel Jean-François Legier Erick Paleczny Christophe Seguinot Denis Deschacht 1
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : This paper deals with propagation delay, rise time and crosstalk for Cu wire of 100 nm width and 2.2 to 1.7 aspect ratio AR ( AR /spl sime/ h/w) in single and coupled configuration. Electrical and electromagnetical characteristics are predicted, with a full wave analysis, for various wire resistivity and low k dielectric material when a clock pulse of 143 ps period (7 GHz) propagate. Critical value of 300 /spl mu/m is calculated for wire length when propagation delay equals MOSFET switching delay. Such critical values also induced more than 20% crosstalk in two coupled lines with 100 nm spacing and low k=2.0.
Type de document :
Communication dans un congrès
SPI: Signal Propagation on Interconnects, May 2004, Heidelberg, Germany. IEEE, 8th IEEE Workshop on Signal Propagation on Interconnects, pp.189-191, 2004, 〈10.1109/SPI.2004.1409048〉
Liste complète des métadonnées

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00108848
Contributeur : Christine Carvalho de Matos <>
Soumis le : lundi 23 octobre 2006 - 12:56:59
Dernière modification le : jeudi 11 janvier 2018 - 06:27:18

Identifiants

Collections

Citation

K. El Bouazzati, F. Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, et al.. Electrical Performance of Single and Coupled Cu Interconnects for the 70 nm Technology. SPI: Signal Propagation on Interconnects, May 2004, Heidelberg, Germany. IEEE, 8th IEEE Workshop on Signal Propagation on Interconnects, pp.189-191, 2004, 〈10.1109/SPI.2004.1409048〉. 〈lirmm-00108848〉

Partager

Métriques

Consultations de la notice

27