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A Compact Model for Electrical Simulation of MOS Transistor with Gate Oxide Short Defect

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00109221
Contributor : Christine Carvalho De Matos Connect in order to contact the contributor
Submitted on : Tuesday, October 24, 2006 - 7:42:09 AM
Last modification on : Tuesday, September 6, 2022 - 5:01:17 PM

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  • HAL Id : lirmm-00109221, version 1

Citation

Michel Renovell, Jean-Marc J.-M. Galliere, Florence Azaïs, Yves Bertrand, Jean-Michel Portal. A Compact Model for Electrical Simulation of MOS Transistor with Gate Oxide Short Defect. [Research Report] 04080, Lirmm, University of Montpellier. 2004. ⟨lirmm-00109221⟩

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