A Compact Model for Electrical Simulation of MOS Transistor with Gate Oxide Short Defect - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Reports (Research Report) Year : 2004
No file

Dates and versions

lirmm-00109221 , version 1 (24-10-2006)

Identifiers

  • HAL Id : lirmm-00109221 , version 1

Cite

Michel Renovell, Jean-Marc J.-M. Galliere, Florence Azaïs, Yves Bertrand, Jean-Michel Portal. A Compact Model for Electrical Simulation of MOS Transistor with Gate Oxide Short Defect. [Research Report] 04080, Lirmm, University of Montpellier. 2004. ⟨lirmm-00109221⟩
134 View
0 Download

Share

Gmail Facebook X LinkedIn More