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Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System

Freddy Ponchel 1 Jean-François Legier 1 Erick Paleczny 1 Christophe Seguinot 1 Denis Deschacht 2 
1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
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Conference papers
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00148905
Contributor : Martine Peridier Connect in order to contact the contributor
Submitted on : Wednesday, May 23, 2007 - 4:38:45 PM
Last modification on : Friday, August 5, 2022 - 10:47:58 AM

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  • HAL Id : lirmm-00148905, version 1

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CNRS | UNIV-VALENCIENNES | IEMN | SYSMIC | LIRMM | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER | UNIV-LILLE

Citation

Freddy Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht. Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System. 11th IEEE Workshop on Signal Propagation on Interconnects, May 2007, Genova, Italy. pp.24-28. ⟨lirmm-00148905⟩

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