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Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00148905
Contributor : Martine Peridier <>
Submitted on : Wednesday, May 23, 2007 - 4:38:45 PM
Last modification on : Monday, March 2, 2020 - 1:38:03 PM

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  • HAL Id : lirmm-00148905, version 1

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Freddy Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht. Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System. 11th IEEE Workshop on Signal Propagation on Interconnects, May 2007, Genova, Italy. pp.24-28. ⟨lirmm-00148905⟩

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