Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Communication Dans Un Congrès Année : 2007

Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System

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Micro et nanotechnologies/Microélectronique

Martine Peridier  : Connectez-vous pour contacter le contributeur

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00148905

Soumis le : mercredi 23 mai 2007-16:38:45

Dernière modification le : mercredi 24 janvier 2024-09:54:18

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lirmm-00148905 , version 1 (23-05-2007)

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Freddy Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht. Comparison of the Benefits, From SiO2 to Ultralow-K Dielectric and Air Spacing Introduction, in Term of Interconnects Performances, for the Future High Speed Ic's in a Multicoupled Lines System. 11th IEEE Workshop on Signal Propagation on Interconnects, SPI 2007, May 2007, Genova, Italy. pp.24-28, ⟨10.1109/SPI.2007.4512199⟩. ⟨lirmm-00148905⟩

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