Modeling and System-Level Simulation of a CMOS Convective Accelerometer

Abstract : This paper introduces an analytical modeling of a convective CMOS accelerometer. The device is a one-axis accelerometer based on a three bridges structure (one heater and two detectors). The modeling relies on the use of heat transfer fundamentals and is validated using experimental data issued from both test-vehicles and FEM analysis. It describes the heat conduction phenomenon that determines the thermal initial condition and then the convection mechanism that provides the sensitivity to the acceleration. Although only the static model is detailed, the dynamic behavior of test samples has been characterized and included into the HDL module. In order to illustrate the use of the model, the sensor is simulated together with its control electronics in an implementation of an A/D modulator. Simulation results are then compared with physical measurement with good agreement.
keyword : Mems
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Article dans une revue
Solid-State Electronics, Elsevier, 2007, Vol. 51 (Issues 11-12), pp.1609-1617. 〈10.1016/j.sse.2007.09.039〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00194226
Contributeur : Frédérick Mailly <>
Soumis le : jeudi 6 décembre 2007 - 09:40:59
Dernière modification le : jeudi 11 janvier 2018 - 06:27:19

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Olivier Leman, Aboubacar Chaehoi, Frédérick Mailly, Laurent Latorre, Pascal Nouet. Modeling and System-Level Simulation of a CMOS Convective Accelerometer. Solid-State Electronics, Elsevier, 2007, Vol. 51 (Issues 11-12), pp.1609-1617. 〈10.1016/j.sse.2007.09.039〉. 〈lirmm-00194226〉

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