Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain

Abstract : A measurement setup for the characterization of very fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with and without a guard ring implemented respectively in a 65nm and 130nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted.
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Communication dans un congrès
EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium, Sep 2007, Anaheim, CA, USA, pp.3A.2_1- 3A.2_10, 2007, 〈10.1109/EOSESD.2007.4401748〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00199232
Contributeur : Florence Azais <>
Soumis le : mardi 18 décembre 2007 - 16:30:10
Dernière modification le : jeudi 24 mai 2018 - 15:59:24

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Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs. Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain. EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium, Sep 2007, Anaheim, CA, USA, pp.3A.2_1- 3A.2_10, 2007, 〈10.1109/EOSESD.2007.4401748〉. 〈lirmm-00199232〉

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