Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Conference Papers Year : 2007

Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain

Abstract

A measurement setup for the characterization of very fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with and without a guard ring implemented respectively in a 65nm and 130nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted.

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Micro and nanotechnologies/Microelectronics

Florence Azais  : Connect in order to contact the contributor

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00199232

Submitted on : Tuesday, December 18, 2007-4:30:10 PM

Last modification on : Friday, March 24, 2023-2:52:49 PM

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lirmm-00199232 , version 1 (18-12-2007)

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Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs. Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain. EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium, Sep 2007, Anaheim, CA, USA, pp.3A.2_1- 3A.2_10, ⟨10.1109/EOSESD.2007.4401748⟩. ⟨lirmm-00199232⟩

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