Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Communication Dans Un Congrès Année : 2007

Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain

Résumé

A measurement setup for the characterization of very fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with and without a guard ring implemented respectively in a 65nm and 130nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted.

Domaines

Micro et nanotechnologies/Microélectronique

Florence Azais  : Connectez-vous pour contacter le contributeur

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00199232

Soumis le : mardi 18 décembre 2007-16:30:10

Dernière modification le : vendredi 24 mars 2023-14:52:49

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Dates et versions

lirmm-00199232 , version 1 (18-12-2007)

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Citer

Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs. Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain. EOS/ESD'07: 29th Electrical Overstress/Electrostatic Discharge Symposium, Sep 2007, Anaheim, CA, USA, pp.3A.2_1- 3A.2_10, ⟨10.1109/EOSESD.2007.4401748⟩. ⟨lirmm-00199232⟩

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