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General Representation of CMOS Structure Transition time for Timing Library Representation

Philippe Maurine 1 Nadine Azemard 1, * Daniel Auvergne 2
* Corresponding author
1 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
2 LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : Nonzero signal rise and fall times significantly contribute to gate propagation delay. Designers must accurately consider them when defining timing library format. Based on a design oriented macromodel of the timing performance of complementary metal-oxide semiconductor (CMOS) structures, a general representation of transition times allowing fast and accurate cell performance evaluation is presented. This representation is validated comparing calculated gate input-output transition time values with respect to standard lookup representation obtained from HSPICE simulations (BSIM3, v.3, level 69, 0.25 μm process).
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Journal articles
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00239318
Contributor : Nadine Azemard <>
Submitted on : Tuesday, February 5, 2008 - 2:30:34 PM
Last modification on : Wednesday, October 24, 2018 - 9:02:05 AM

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  • HAL Id : lirmm-00239318, version 1

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CNRS | SYSMIC | LIRMM | TDS-MACS | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER

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Philippe Maurine, Nadine Azemard, Daniel Auvergne. General Representation of CMOS Structure Transition time for Timing Library Representation. Electronics Letters, IET, 2002, 38 (4), pp.175-177. ⟨lirmm-00239318⟩

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