Non-Linear and Non-Split Transistor MOS Model for Gate Oxyde Short - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2002
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lirmm-00269333 , version 1 (02-04-2008)

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  • HAL Id : lirmm-00269333 , version 1

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Michel Renovell, Jean-Marc J.-M. Galliere, Florence Azaïs, Yves Bertrand. Non-Linear and Non-Split Transistor MOS Model for Gate Oxyde Short. DBT: Defect Based Testing, Apr 2002, Monterey, CA, United States. pp.11-16. ⟨lirmm-00269333⟩
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