Delay Testing of MOS Transistor with Gate Oxide Short - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2003
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lirmm-00269641 , version 1 (03-04-2008)

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  • HAL Id : lirmm-00269641 , version 1

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Michel Renovell, Jean-Marc J.-M. Galliere, Florence Azaïs, Yves Bertrand. Delay Testing of MOS Transistor with Gate Oxide Short. ATS: Asian Test Symposium, Nov 2003, Xian, China. pp.168-173. ⟨lirmm-00269641⟩
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