Modeling the Random Parameters Effects in a Non-Split Model of Gate Oxide Short

Abstract : This paper presents a new model for gate-to-channel GOS defects. The transistors used in digital cell library are usually designed wish a minimum-size. This new model permits to handle minimal-length transistors allowing the simulation of GOS defects in realistic digital circuits. Based on the electrical analysis of the defect behavior, a comprehensive method for the model construction is detailed. It is shown that the behavior of the proposed model matches in a satisfactory way the behavior of a defective transistor including the random parameters of the defect.
Type de document :
Article dans une revue
Journal of Electronic Testing, Springer Verlag, 2003, 19 (4), pp.10
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00370365
Contributeur : Jean-Marc Galliere <>
Soumis le : mardi 24 mars 2009 - 11:12:27
Dernière modification le : jeudi 11 janvier 2018 - 06:27:19

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  • HAL Id : lirmm-00370365, version 1

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Michel Renovell, Jean-Marc Galliere, Florence Azaïs, Yves Bertrand. Modeling the Random Parameters Effects in a Non-Split Model of Gate Oxide Short. Journal of Electronic Testing, Springer Verlag, 2003, 19 (4), pp.10. 〈lirmm-00370365〉

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