This paper studies the voltage and current behavior of Gate Oxide Short faults due to pinhole in the gate oxide. The objective of this paper is to give a detailed analysis of the behavior of the GOS defect taking into account the random parameter of the defect such as the GOS resistance, the GOS location and the GOS size. Because an accurate analysis is desired, the bi-dimensional array will be used. Because a complete analysis is desired, we derive characteristic of the GOS as a function of the GOS resistance, location and size. Finally, because a realistic analysis is desired the model has been validated through measurements of GOS intentionally injected into a designed and manufactured circuit.