Skip to Main content Skip to Navigation
Conference papers

Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models

Complete list of metadata

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00370798
Contributor : Martine Peridier <>
Submitted on : Wednesday, March 25, 2009 - 2:09:12 PM
Last modification on : Wednesday, December 2, 2020 - 9:40:09 AM

Identifiers

  • HAL Id : lirmm-00370798, version 1

Collections

Citation

Jean-Marc Galliere, Florence Azaïs, Michel Renovell, Luigi Dilillo. Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models. DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2009, Cairo, Egypt. pp.225-229. ⟨lirmm-00370798⟩

Share

Metrics

Record views

132