Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models

Type de document :
Communication dans un congrès
DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2009, Cairo, Egypt. 4th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era, pp.225-229, 2009
Liste complète des métadonnées

https://hal-lirmm.ccsd.cnrs.fr/lirmm-00370798
Contributeur : Martine Peridier <>
Soumis le : mercredi 25 mars 2009 - 14:09:12
Dernière modification le : jeudi 11 janvier 2018 - 06:27:19

Identifiants

  • HAL Id : lirmm-00370798, version 1

Collections

Citation

Jean-Marc Galliere, Florence Azaïs, Michel Renovell, Luigi Dilillo. Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models. DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2009, Cairo, Egypt. 4th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era, pp.225-229, 2009. 〈lirmm-00370798〉

Partager

Métriques

Consultations de la notice

31