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Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00370798
Contributor : Martine Peridier <>
Submitted on : Wednesday, March 25, 2009 - 2:09:12 PM
Last modification on : Monday, February 11, 2019 - 3:46:26 PM

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  • HAL Id : lirmm-00370798, version 1

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Jean-Marc Galliere, Florence Azaïs, Michel Renovell, Luigi Dilillo. Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split Models. DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2009, Cairo, Egypt. pp.225-229. ⟨lirmm-00370798⟩

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