Analytical and Finite-Element Modeling of Localized-Mass Sensitivity of Thin-Film Bulk Acoustic-Wave Resonators (FBAR) - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles IEEE Sensors Journal Year : 2009

Analytical and Finite-Element Modeling of Localized-Mass Sensitivity of Thin-Film Bulk Acoustic-Wave Resonators (FBAR)

Abstract

Analytical and finite-element models of a localized-mass sensor fabricated with thin-film bulk acoustic wave resonator (FBAR) are reported. While our group demonstrated FBAR-based localized-mass sensors, no previous modeling of these sensors is found in the literature. The finite-element model (FEM) defines the boundary conditions and performs parametric analysis of the sensor's mass loading, whereas the analytical approach takes advantage on a modified Mason's model to describe the transmission-line circuit of the sensor. The sensitivity of the resonance frequency to location and size of mass deposition has been studied. Both the experimental and modeled responsivities exhibit a nonlinear dependence on the location and size of the localized-mass.
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lirmm-00406927 , version 1 (23-07-2009)

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Humberto Campanella, Emile Martincic, Pascal Nouet, Arantxa Uranga, Jaume Esteve. Analytical and Finite-Element Modeling of Localized-Mass Sensitivity of Thin-Film Bulk Acoustic-Wave Resonators (FBAR). IEEE Sensors Journal, 2009, 9 (8), pp.892-901. ⟨10.1109/JSEN.2009.2024858⟩. ⟨lirmm-00406927⟩
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