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Analytical and Finite-Element Modeling of Localized-Mass Sensitivity of Thin-Film Bulk Acoustic-Wave Resonators (FBAR)

Humberto Campanella 1, 2 Emile Martincic 3 Pascal Nouet 4 Arantxa Uranga 5 Jaume Esteve 2
1 LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
2 CNM - Centro Nacional de Microelectronica [Spain]
3 IEF - Institut d'électronique fondamentale
4 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
5 UAB - Unité de Microélectronique, Départament d'Informatique
Abstract : Analytical and finite-element models of a localized-mass sensor fabricated with thin-film bulk acoustic wave resonator (FBAR) are reported. While our group demonstrated FBAR-based localized-mass sensors, no previous modeling of these sensors is found in the literature. The finite-element model (FEM) defines the boundary conditions and performs parametric analysis of the sensor's mass loading, whereas the analytical approach takes advantage on a modified Mason's model to describe the transmission-line circuit of the sensor. The sensitivity of the resonance frequency to location and size of mass deposition has been studied. Both the experimental and modeled responsivities exhibit a nonlinear dependence on the location and size of the localized-mass.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00406927
Contributor : Lionel Torres <>
Submitted on : Thursday, July 23, 2009 - 4:25:23 PM
Last modification on : Wednesday, September 16, 2020 - 4:51:29 PM

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CNRS | SYSMIC | LIRMM | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER

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Humberto Campanella, Emile Martincic, Pascal Nouet, Arantxa Uranga, Jaume Esteve. Analytical and Finite-Element Modeling of Localized-Mass Sensitivity of Thin-Film Bulk Acoustic-Wave Resonators (FBAR). IEEE Sensors Journal, Institute of Electrical and Electronics Engineers, 2009, 9 (8), pp.892-901. ⟨10.1109/JSEN.2009.2024858⟩. ⟨lirmm-00406927⟩

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