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Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain

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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00435866
Contributor : Martine Peridier <>
Submitted on : Wednesday, November 25, 2009 - 10:32:19 AM
Last modification on : Thursday, May 24, 2018 - 3:59:24 PM

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Jean-Robert Manouvrier, Pascal Fonteneau, Charles-Alexandre Legrand, Pascal Nouet, Florence Azaïs. Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain. Microelectronics Reliability, Elsevier, 2009, 49 (12), pp.1424-1432. ⟨10.1016/j.microrel.2009.06.056⟩. ⟨lirmm-00435866⟩

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