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A DfT Solution for Oxide Thickness Varitions in ATMEL eFlash Technology

Pierre-Didier Mauroux 1 Arnaud Virazel 2 Alberto Bosio 2 Luigi Dilillo 2 Patrick Girard 2 Serge Pravossoudovitch 2 Benoît Godard 3 Gilles Feste 3 Laurent Vachez 3 
1 LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
2 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
3 ATMEL - Atmel Corporation
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Conference papers
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00647750
Contributor : Martine Peridier Connect in order to contact the contributor
Submitted on : Friday, December 2, 2011 - 3:43:37 PM
Last modification on : Friday, August 5, 2022 - 10:48:11 AM

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  • HAL Id : lirmm-00647750, version 1

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CNRS | SYSMIC | LIRMM | LIRMM_MIC | MIC | MIPS | UNIV-MONTPELLIER

Citation

Pierre-Didier Mauroux, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, et al.. A DfT Solution for Oxide Thickness Varitions in ATMEL eFlash Technology. DTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2011, Athènes, Greece. ⟨lirmm-00647750⟩

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