Impact of Resistive-Open Defects on the Heat Current of TAS-MRAM Architectures

Abstract : Magnetic Random Access Memory (MRAM) is an emerging technology with the potential to become the universal on-chip memory. Among the existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages compared to the others technologies: selectivity, single magnetic field and integration density. As any other types of memory, TAS-MRAMs are prone to defects, so TAS-MRAM testing needs definitely to be investigated since only few papers can be found in the literature. In this paper we analyze the impact resistive-open defects on the heat current of a TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 4×4 TAS-MRAM architecture enabling any read/write operations. Results show that W0 and/or W1 operations may be affected by the resistive-open defects. This study provides insights into the various types of TAS-MRAM defects and their behavior. As future work, we plan to utilize these analyses results to guide the test phase by providing effective test algorithm targeting fault related to actual defects that may affect TAS-MRAM architecture.
Type de document :
Communication dans un congrès
DATE: Design, Automation and Test in Europe, Mar 2012, Dresden, Germany. Design, Automation & Test in Europe Conference & Exhibition (DATE), 2012, pp.532-537, 2012, 〈10.1109/DATE.2012.6176526〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00689024
Contributeur : Martine Peridier <>
Soumis le : jeudi 19 avril 2012 - 11:10:17
Dernière modification le : jeudi 24 mai 2018 - 15:59:24

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João Azevedo, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, et al.. Impact of Resistive-Open Defects on the Heat Current of TAS-MRAM Architectures. DATE: Design, Automation and Test in Europe, Mar 2012, Dresden, Germany. Design, Automation & Test in Europe Conference & Exhibition (DATE), 2012, pp.532-537, 2012, 〈10.1109/DATE.2012.6176526〉. 〈lirmm-00689024〉

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