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Conference papers

Neutron-Induced Failure in Super-Junction, IGBT, and SiC Power Devices

Alessio Griffoni 1 Jeroen van Duivenbode 2 Dimitri Linten 1 Eddy Simoen 3 Paolo Rech 4 Luigi Dilillo 4, * Frédéric Wrobel 5 Patrick Verbist 1 Guido Groeseneken 1
* Corresponding author
2 Electromechanics and Power Electronics
TU/e - Eindhoven University of Technology [Eindhoven]
4 SysMIC - Conception et Test de Systèmes MICroélectroniques
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
5 RADIAC - Radiations et composants
IES - Institut d’Electronique et des Systèmes
Abstract : We investigate the occurrence of Multiple Bit Upsets in commercial SRAMs of 4Mbits and 32Mbits when irradiated with neutrons. The devices were irradiated at TSL facility with QMN beams of energies from 50MeV to 180MeV. Experimental data demonstrate that the dynamic-stress increases SRAMs sensitivity as well as MBUs occurrence for both the memory types. We also show that both SEU and MBU cross section may depend on memory architecture and memory utilization.
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Submitted on : Wednesday, March 27, 2013 - 4:13:05 PM
Last modification on : Monday, October 11, 2021 - 1:24:11 PM




Alessio Griffoni, Jeroen van Duivenbode, Dimitri Linten, Eddy Simoen, Paolo Rech, et al.. Neutron-Induced Failure in Super-Junction, IGBT, and SiC Power Devices. RADECS: Radiation and Its Effects on Components and Systems, Sep 2011, Seville, Spain. pp.226-231, ⟨10.1109/RADECS.2011.6131395⟩. ⟨lirmm-00805339⟩



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