Evaluation of hybrid MRAM/CMOS cells for reconfigurable computing

Abstract : The main objective of this paper is to give an overview of different hybrid MRAM/CMOS cells to use in the context of reconfigurable computing. The way to convert magnetic information into an electrical one is not unique and we propose to compare different kind of hybrid cells. These hybrid cells can be used to define structures as Look-up Table, configuration memory point, Flip-flop and other basic elements needed to define programmable logic. Even if these cells were designed for the TAS (Thermally Assisted Switching) MRAM technology, it is possible to adapt them to more advanced technologies such as STT (Spin Transfer Torque).
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Communication dans un congrès
NEWCAS: New Circuits and Systems, Jun 2013, Paris, France. IEEE, 11th International New Circuits and Systems Conference, 2013, 〈http://www.newcas.org/〉. 〈10.1109/NEWCAS.2013.6573676〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-00818766
Contributeur : Lionel Torres <>
Soumis le : lundi 29 avril 2013 - 09:48:55
Dernière modification le : jeudi 11 janvier 2018 - 06:27:19

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Lionel Torres, Raphael M. Brum, Yoann Guillemenet, Luís Vitório Cargnini, Gilles Sassatelli. Evaluation of hybrid MRAM/CMOS cells for reconfigurable computing. NEWCAS: New Circuits and Systems, Jun 2013, Paris, France. IEEE, 11th International New Circuits and Systems Conference, 2013, 〈http://www.newcas.org/〉. 〈10.1109/NEWCAS.2013.6573676〉. 〈lirmm-00818766〉

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