Multiple Cell Upset Classification in Commercial SRAMs

Abstract : While single bit upsets on memories and storage elements are mitigated with either the use of redundancy and/or error correction codes, Multiple-Cell-Upsets (MCU) may become a significant threat to the integrity of systems when the corrupted cells belong to the same word. In this paper, we identify four types of MCUs as they were recorded during several irradiations under an atmospheric-like neutron beam (ISIS facility). An analysis is done on the underlying reasons of occurrence of each MCU type, as well as their shapes and sizes in order to classify them. The results of this work concern a commercial 90 nm SRAM that was tested under an atmospheric neutron beam in static and dynamic mode. It is shown that, when the memory is in dynamic mode, not only the typical MCUs that involve a few flipped cells may appear but also large clusters of upsets are possible to occur with hundreds or even thousands of cells being affected.
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Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1747-1754. 〈http://ieeexplore.ieee.org/Xplore/home.jsp〉. 〈10.1109/TNS.2014.2313742〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01234446
Contributeur : Luigi Dilillo <>
Soumis le : jeudi 26 novembre 2015 - 22:37:26
Dernière modification le : mercredi 21 mars 2018 - 10:03:00

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Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, et al.. Multiple Cell Upset Classification in Commercial SRAMs. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1747-1754. 〈http://ieeexplore.ieee.org/Xplore/home.jsp〉. 〈10.1109/TNS.2014.2313742〉. 〈lirmm-01234446〉

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