Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT

Abstract : Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can be occurring simultaneously. It is shown that biased negatively the gate leads to a substantial increase of SEB cross section.
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Communication dans un congrès
RADECS: Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. 14th European Conference on Radiation and Its Effects on Components and Systems, 2013, 〈10.1109/RADECS.2013.6937428〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01237617
Contributeur : Luigi Dilillo <>
Soumis le : jeudi 3 décembre 2015 - 15:07:28
Dernière modification le : jeudi 6 septembre 2018 - 14:02:02

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Lionel Foro, Antoine Touboul, Frédéric Wrobel, Paolo Rech, Luigi Dilillo, et al.. Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT. RADECS: Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. 14th European Conference on Radiation and Its Effects on Components and Systems, 2013, 〈10.1109/RADECS.2013.6937428〉. 〈lirmm-01237617〉

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