Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier
Communication Dans Un Congrès Année : 2013

Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT

Résumé

Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can be occurring simultaneously. It is shown that biased negatively the gate leads to a substantial increase of SEB cross section.
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Dates et versions

lirmm-01237617 , version 1 (03-12-2015)

Identifiants

Citer

Lionel Foro, Antoine Touboul, Frédéric Wrobel, Paolo Rech, Luigi Dilillo, et al.. Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT. RADECS: Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. ⟨10.1109/RADECS.2013.6937428⟩. ⟨lirmm-01237617⟩
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