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Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT

Abstract : Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can be occurring simultaneously. It is shown that biased negatively the gate leads to a substantial increase of SEB cross section.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01237617
Contributor : Luigi Dilillo <>
Submitted on : Thursday, December 3, 2015 - 3:07:28 PM
Last modification on : Monday, September 21, 2020 - 11:34:08 AM

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Lionel Foro, Antoine Touboul, Frédéric Wrobel, Paolo Rech, Luigi Dilillo, et al.. Gate voltage contribution to neutron-induced SEB of Trench Gate Fieldstop IGBT. RADECS: Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. ⟨10.1109/RADECS.2013.6937428⟩. ⟨lirmm-01237617⟩

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