Radiative Effects on MRAM-Based Non-Volatile Elementary Structures - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2015

Radiative Effects on MRAM-Based Non-Volatile Elementary Structures


Radiation robust circuit design for harsh environments like space is a big challenge for today engineers and researchers. As circuits become more and more complex and CMOS processes get denser and smaller, their immunity towards particle strikes decreases drastically. This work has for objective to improve the System on Chip (SoC) robustness against particle attacks targeting very advanced processes. This should be possible combining three already proven robust design techniques: Asynchronous communication, Silicon on Insulator (SOI) technologies and Spintronics. The combination of these three techniques should give some fundamentally new architecture with higher performances than what is available today in terms of robustness but also in terms of speed, consumption and surface.
Fichier principal
Vignette du fichier
PID3716563.pdf (1.24 Mo) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

lirmm-01250733 , version 1 (05-01-2016)



Jeremy Lopes, Gregory Di Pendina, Eldar Zianbetov, Edith Beigné, Lionel Torres. Radiative Effects on MRAM-Based Non-Volatile Elementary Structures. ISVLSI: International Symposium on Very Large Scale Integration, Jul 2015, Montpellier, France. pp.321-326, ⟨10.1109/ISVLSI.2015.71⟩. ⟨lirmm-01250733⟩
246 View
470 Download



Gmail Facebook X LinkedIn More