Design and performance parameters of an ultra-low voltage, single supply 32bit processor implemented in 28nm FDSOI technology
Abstract
This work presents a single-supply SPARC 32b V8 microprocessor designed with Ultra Low Voltage (ULV) adapted standard cells and memories, aiming at low energy operation and stand by power. The microprocessor, equipped with 10 Transistors ULV bitcell 8KB SRAM cache, has been fabricated in Fully Depleted Silicon On Insulator (FDSOI) 28nm technology. A comparative analysis with similar implementations has been provided highlighting the performance gain and power savings that are achieved by our design methodology and implementation technology. Wafer-level tests showed that our ULV adapted microprocessor has an operating range that is functional down to 0.33V and that the ULV able cache can save from 30% to 62% energy.
Keywords
SRAM chips
Energy efficient Cache
ULV
RISC
FDSOI
wafer-level tests
ultralow voltage
storage capacity 8 Kbit
storage capacity 32 bit
size 28 nm
low energy operation
fully depleted silicon on insulator technology
SRAM cache
SPARC V8 microprocessor
FDSOI technology
Standards
Registers
Microprocessors
Transistors
CMOS integrated circuits
Low voltage
silicon-on-insulator
microprocessor chips
cache storage
| Origin | Files produced by the author(s) |
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