Methodologies for the Statistical Analysis of Memory Response to Radiation

Abstract : Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.
Type de document :
Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, 63 (4), pp.2122-2128. 〈10.1109/TNS.2016.2527781〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01382508
Contributeur : Luigi Dilillo <>
Soumis le : lundi 17 octobre 2016 - 11:04:16
Dernière modification le : jeudi 11 janvier 2018 - 06:27:29

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Alexandre Bosser, Viyas Gupta, Georgios Tsiligiannis, Christopher Frost, Ali Mohammad Zadeh, et al.. Methodologies for the Statistical Analysis of Memory Response to Radiation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, 63 (4), pp.2122-2128. 〈10.1109/TNS.2016.2527781〉. 〈lirmm-01382508〉

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