Methodologies for the Statistical Analysis of Memory Response to Radiation

Abstract : Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01382508
Contributor : Luigi Dilillo <>
Submitted on : Monday, October 17, 2016 - 11:04:16 AM
Last modification on : Tuesday, August 27, 2019 - 11:54:03 AM

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Alexandre Louis Bosser, Viyas Gupta, Georgios Tsiligiannis, Christopher Frost, Ali Mohammad Zadeh, et al.. Methodologies for the Statistical Analysis of Memory Response to Radiation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, 63 (4), pp.2122-2128. ⟨10.1109/TNS.2016.2527781⟩. ⟨lirmm-01382508⟩

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