An SEU Tolerant MRAM based non-volatile asynchronous circuit design

Abstract : This work proposes a novel SEU tolerant circuit design based on asynchronous communica- tion coupled with magnetic memory, MRAM, and SOI process that can detect and correct single or multiple errors without triplication of the circuit.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01396984
Contributor : Lionel Torres <>
Submitted on : Tuesday, November 15, 2016 - 11:53:07 AM
Last modification on : Friday, September 13, 2019 - 8:38:02 PM

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Jeremy Lopes, Gregory Dipendina, Edith Beigné, Lionel Torres. An SEU Tolerant MRAM based non-volatile asynchronous circuit design. RADECS: Radiation and its Effects on Components and Systems, Sep 2016, Bremen, Germany. ⟨10.1109/RADECS.2016.8093151⟩. ⟨lirmm-01396984⟩

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