Logic circuits design based on MRAM: from single tomulti-states cells storage

Abstract : In recent years, conventional silicon-based high-speed computing circuits became increasingly power-hungry due to the leakage currents and accelerated data traffic. Furthermore, numerous short-channel and quantum effects are emerging that affect both the manufacturing process and the functionality of today’s microelectronic systems-on-chip. Spintronic devices that take advantage of the electron spin are widely seen as the most promising solutions to circumvent the CMOS technology scaling threats. Given that they combine non-volatility with radiation immunity, speed, low power consumption, and quasi-infinite endurance, it is possible to use them in a wide variety of applications. In this chapter, spintronic phenomena, technology and hybrid (CMOS/MRAM) devices are presented as well as their use in processor domain (to replace parts of the memory hierarchy), hybrid logic, and reconfigurable computing.
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Chapitre d'ouvrage
W. Zhao; G. Prenat. Spintronic based Computing, Springer, pp.179-200, 2015, 978-3-319-15179-3. 〈10.1007/978-3-319-15180-9_6〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01421466
Contributeur : Caroline Lebrun <>
Soumis le : jeudi 22 décembre 2016 - 13:38:14
Dernière modification le : jeudi 28 juin 2018 - 15:12:04

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Bojan Jovanovic, Raphael Brum, Lionel Torres. Logic circuits design based on MRAM: from single tomulti-states cells storage. W. Zhao; G. Prenat. Spintronic based Computing, Springer, pp.179-200, 2015, 978-3-319-15179-3. 〈10.1007/978-3-319-15180-9_6〉. 〈lirmm-01421466〉

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