Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

Abstract : In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)- based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.
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Communication dans un congrès
SISPAD: Simulation of Semiconductor Processes and Devices, Sep 2017, Kamakura, Japan. IEEE, International Conference on Simulation of Semiconductor Processes and Devices, 2017, 〈10.23919/SISPAD.2017.8085287〉
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-01795803
Contributeur : Philippe Maurine <>
Soumis le : vendredi 18 mai 2018 - 17:07:16
Dernière modification le : mardi 23 octobre 2018 - 17:22:04

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Jaehyun Lee, Jie Liang, Salvatore Amoroso, Toufik Sadi, Liping Wang, et al.. Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology. SISPAD: Simulation of Semiconductor Processes and Devices, Sep 2017, Kamakura, Japan. IEEE, International Conference on Simulation of Semiconductor Processes and Devices, 2017, 〈10.23919/SISPAD.2017.8085287〉. 〈lirmm-01795803〉

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