Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2017

Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

Abstract

In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)- based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.
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Dates and versions

lirmm-01795803 , version 1 (16-07-2019)

Identifiers

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Jaehyun Lee, Jie Liang, Salvatore Amoroso, Toufik Sadi, Liping Wang, et al.. Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology. SISPAD: Simulation of Semiconductor Processes and Devices, Sep 2017, Kamakura, Japan. pp.153-156, ⟨10.23919/SISPAD.2017.8085287⟩. ⟨lirmm-01795803⟩
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