Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Abstract : This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-02007922
Contributor : Luigi Dilillo <>
Submitted on : Tuesday, February 5, 2019 - 2:42:52 PM
Last modification on : Monday, July 1, 2019 - 10:28:03 AM

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Alexandre Louis Bosser, Viyas Gupta, Arto Javanainen, Georgios Tsiligiannis, Stephen Lalumondiere, et al.. Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2018, 65 (8), pp.1708-1714. ⟨10.1109/TNS.2018.2797543⟩. ⟨lirmm-02007922⟩

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