Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory
Résumé
This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.
Fichier principal
2018___TNS___Single_Event_Effects_in_the_Peripheral_Circuitry_of_a_Commercial_Ferroelectric_Random_Access_Memory___HAL_Version.pdf (716.64 Ko)
Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)