Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2018

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Georgios Tsiligiannis
Helmut Puchner
Ari Virtanen
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Abstract

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.
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Dates and versions

lirmm-02007922 , version 1 (18-11-2021)

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Cite

Alexandre Louis Bosser, Viyas Gupta, Arto Javanainen, Georgios Tsiligiannis, Stephen D. Lalumondiere, et al.. Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory. IEEE Transactions on Nuclear Science, 2018, 65 (8), pp.1708-1714. ⟨10.1109/TNS.2018.2797543⟩. ⟨lirmm-02007922⟩
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