Impact of process variations on the detectability of resistive short defects: Comparative analysis between 28nm Bulk and FDSOI technologies

Amit Karel 1 Florence Azaïs 1 Mariane Comte 1 Jean-Marc Galliere 1 Michel Renovell 1
1 TEST - TEST
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : This paper presents a detailed analysis of the impact of process variations on the detection of resistive short defects in 28nm Bulk and FDSOI (Fully Depleted Silicon-On-Insulator) technologies. Two types of short defects are considered for our investigation, i.e. resistive short to either ground terminal (GND) or power supply terminal (VDD). A comparative study is presented for both Regular-VT devices (FDSOI-RVT and Bulk-LR) and Low-Vt devices (FDSOI-LVT and Bulk-LL). The study is performed under nominal and low power supply operating conditions, and the possibility of using the Body Biasing option offered by the FDSOI technology is also considered. Based on Monte-Carlo simulations, defect detectability ranges are quantified for each implementation and the impact of process variations on the achieved detectability ranges is commented.
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https://hal-lirmm.ccsd.cnrs.fr/lirmm-02064921
Contributor : Florence Azais <>
Submitted on : Tuesday, March 12, 2019 - 12:02:16 PM
Last modification on : Thursday, July 25, 2019 - 3:36:34 PM

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Amit Karel, Florence Azaïs, Mariane Comte, Jean-Marc Galliere, Michel Renovell. Impact of process variations on the detectability of resistive short defects: Comparative analysis between 28nm Bulk and FDSOI technologies. LATS: Latin-American Test Symposium, Mar 2018, Sao Paulo, Brazil. ⟨10.1109/LATW.2018.8349696⟩. ⟨lirmm-02064921⟩

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