Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Journal Articles IEEE Transactions on Electron Devices Year : 2019

Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Jie Liang
  • Function : Author
  • PersonId : 971767
Rongmei Chen
Raphaël Ramos
Jaeyoung Lee
  • Function : Author
Hanako Okuno
  • Function : Author
Dipankar Kalita
  • Function : Author
Vihar P. Georgiev
  • Function : Author
Salim Berrada
Toufik Saadi
Benjamin Uhlig
  • Function : Author
Katherina Lilienthal
  • Function : Author
Abitha Dhavamani
  • Function : Author
Fabian Konemann
  • Function : Author
Bernd Gotsmann
  • Function : Author
Bingan Chen
  • Function : Author
Asenov Asen
  • Function : Author
Jean Dijon
  • Function : Author
Aida Todri-Sanial

Abstract

In this paper, we investigate, by combining electrical measurements with an atomistic-to-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.
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Dates and versions

lirmm-02082869 , version 1 (28-03-2019)

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Jie Liang, Rongmei Chen, Raphaël Ramos, Jaeyoung Lee, Hanako Okuno, et al.. Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications. IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2346-2352. ⟨10.1109/TED.2019.2901658⟩. ⟨lirmm-02082869⟩
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