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Self-Robust Non-Volatile C-element for Single Event Upset Enhanced Tolerance

Odilia Coi 1 Lionel Torres 1 Gregory Di Pendina 2
1 ADAC - ADAptive Computing
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : For embedded systems in harsh environments, a radiation robust circuit design is still an open challenge. As circuits become more and more complex and CMOS processes get denser and smaller, their immunity towards particle strikes decreases drastically. Due to its proven resistance to radiation effects and its inherent non-volatility, Spin-Transfer-Torque-based Magnetic Tunnel Junction (STT-MTJ) is considered as a serious promising candidate for high reliability electronic. The first radiation hardened STT-MTJ based Non-Volatile C-element is presented in this paper. This hybrid VLSI structure addresses the problem of the non-volatile error occurrence by avoiding MTJs radiation induced magnetization reversal.
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Submitted on : Friday, November 15, 2019 - 4:44:14 PM
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  • HAL Id : lirmm-02366116, version 1


Odilia Coi, Lionel Torres, Gregory Di Pendina. Self-Robust Non-Volatile C-element for Single Event Upset Enhanced Tolerance. 21ème Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France. ⟨lirmm-02366116⟩



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