For embedded systems in harsh environments, a radiation robust circuit design is still an open challenge. As circuits become more and more complex and CMOS processes get denser and smaller, their immunity towards particle strikes decreases drastically. Due to its proven resistance to radiation effects and its inherent non-volatility, Spin-Transfer-Torque-based Magnetic Tunnel Junction (STT-MTJ) is considered as a serious promising candidate for high reliability electronic. The first radiation hardened STT-MTJ based Non-Volatile C-element is presented in this paper. This hybrid VLSI structure addresses the problem of the non-volatile error occurrence by avoiding MTJs radiation induced magnetization reversal.