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Poster communications

Evaluation of embedded STT-MRAM for Ultra Low Power applications

Guillaume Patrigeon 1 Pascal Benoit 1 Lionel Torres 1
1 ADAC - ADAptive Computing
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : The complexity of embedded devices increases as today's applications request always more services. However, the power consumption of SoC has significantly increased due to the high-density integration and the high leakage power of current CMOS transistors. To address these issues, emerging technologies are considered. Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is seen as a promising alternative solution to traditional memories thanks to its negligible leakage current, high density, and non-volatility. Considering low-power applications with duty-cycled behaviours, we evaluate STT-MRAM as a replacement for both embedded Flash and SRAM.
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Poster communications
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Contributor : Guillaume Patrigeon <>
Submitted on : Monday, November 25, 2019 - 6:11:54 PM
Last modification on : Thursday, July 1, 2021 - 10:44:49 AM
Long-term archiving on: : Wednesday, February 26, 2020 - 7:18:21 PM


  • HAL Id : lirmm-02379703, version 1



Guillaume Patrigeon, Pascal Benoit, Lionel Torres. Evaluation of embedded STT-MRAM for Ultra Low Power applications. 13ème Colloque National du GDR SoC², Jun 2019, Montpellier, France. 2019. ⟨lirmm-02379703⟩



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