Evaluation of embedded STT-MRAM for Ultra Low Power applications - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Poster Year : 2019

Evaluation of embedded STT-MRAM for Ultra Low Power applications

Guillaume Patrigeon
Pascal Benoit
Lionel Torres

Abstract

The complexity of embedded devices increases as today's applications request always more services. However, the power consumption of SoC has significantly increased due to the high-density integration and the high leakage power of current CMOS transistors. To address these issues, emerging technologies are considered. Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is seen as a promising alternative solution to traditional memories thanks to its negligible leakage current, high density, and non-volatility. Considering low-power applications with duty-cycled behaviours, we evaluate STT-MRAM as a replacement for both embedded Flash and SRAM.
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Dates and versions

lirmm-02379703 , version 1 (25-11-2019)

Identifiers

  • HAL Id : lirmm-02379703 , version 1

Cite

Guillaume Patrigeon, Pascal Benoit, Lionel Torres. Evaluation of embedded STT-MRAM for Ultra Low Power applications. 13e Colloque National du GDR SoC², Jun 2019, Montpellier, France. , 2019. ⟨lirmm-02379703⟩
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