Self-robust Non-Volatile C-element for single event upset enhanced tolerance - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2019

Self-robust Non-Volatile C-element for single event upset enhanced tolerance

Odilia Coi
Lionel Torres

Abstract

For embedded systems in harsh environments, a ra- diation robust circuit design is still an open challenge. As circuits become more and more complex and CMOS processes get denser and smaller, their immunity to- wards particle strikes decreases drastically. Due to its proven resistance to radiation effects and its inherent non- volatility, Spin-Transfer-Torque-based Magnetic Tunnel Junction (STT-MTJ) is considered as a serious promising candidate for high reliability electronic. The first radia- tion hardened STT-MTJ based Non-Volatile C-element is presented in this paper. This hybrid VLSI structure ad- dresses the problem of the non-volatile error occurrence by avoiding MTJs radiation induced magnetization reversal.
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Dates and versions

lirmm-02957093 , version 1 (13-01-2022)

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  • HAL Id : lirmm-02957093 , version 1

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Odilia Coi, Lionel Torres, Gregory Di Pendina, Guillaume Prenat. Self-robust Non-Volatile C-element for single event upset enhanced tolerance. RADECS 2019 - 19th European Conference on Radiation and Its Effects on Components and Systems, Sep 2019, Montpellier, France. ⟨lirmm-02957093⟩
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