For embedded systems in harsh environments, a ra- diation robust circuit design is still an open challenge. As circuits become more and more complex and CMOS processes get denser and smaller, their immunity to- wards particle strikes decreases drastically. Due to its proven resistance to radiation effects and its inherent non- volatility, Spin-Transfer-Torque-based Magnetic Tunnel Junction (STT-MTJ) is considered as a serious promising candidate for high reliability electronic. The first radia- tion hardened STT-MTJ based Non-Volatile C-element is presented in this paper. This hybrid VLSI structure ad- dresses the problem of the non-volatile error occurrence by avoiding MTJs radiation induced magnetization reversal.