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Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

Abstract : Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.
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Contributor : Luigi Dilillo <>
Submitted on : Thursday, November 26, 2020 - 1:06:54 PM
Last modification on : Saturday, November 28, 2020 - 9:55:31 AM

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Lucas Matana Luza, Alexandre Bosser, Viyas Gupta, Arto Javanainen, Ali Mohammadzadeh, et al.. Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory. 32th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), Oct 2019, Noordwijk, Netherlands. pp.1-6, ⟨10.1109/DFT.2019.8875475⟩. ⟨lirmm-03025660⟩



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