Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment - LIRMM - Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier Access content directly
Conference Papers Year : 2020

Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

Abstract

This study investigates the response of SDRAMs to electron irradiation. Stuck bits, SEUs and memory cell degradation is presented in this paper, in a memory that will be part of the ESA JUICE mission.
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Dates and versions

lirmm-03028881 , version 1 (05-10-2021)

Identifiers

  • HAL Id : lirmm-03028881 , version 1

Cite

Daniel Soderstrom, Lucas Matana Luza, Heikki Kettunen, Arto Javanainen, Wilfrid Farabolini, et al.. Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment. NSREC 2020 - IEEE Nuclear and Space Radiation Effects Conference, Nov 2020, Santa Fe (virtual), United States. ⟨lirmm-03028881⟩
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